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3DD13003 Datasheet

Part Number 3DD13003
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet 3DD13003 Datasheet3DD13003 Datasheet (PDF)

R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13003 IC VCEO PC(TO-126(S)) MAIN CHARACTERISTICS 1.5A 400V 20W Package z z z z z APPLICATIONS z Electronic ballasts z High frequency switching power TO-126S TO-126 supply z High frequency power transform z Commonly power amplifier circuit z z z z z (RoHS) FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13003-O-M.

  3DD13003   3DD13003






Part Number 3DD13003
Manufacturers GME
Logo GME
Description High Voltage Fast Switching NPN Power Transistor
Datasheet 3DD13003 Datasheet3DD13003 Datasheet (PDF)

Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES  PC=1W(Mounted on ceramic substrate).  High speed switching.  Die size:1.34*1.34  Small flat package. Pb Lead-free APPLICATIONS  Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit ORDERING INFORMATION Type No. Marking 3DD13003 13003 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol .

  3DD13003   3DD13003







Part Number 3DD13003
Manufacturers TRANSYS Electronics
Logo TRANSYS Electronics
Description Plastic-Encapsulated Transistors
Datasheet 3DD13003 Datasheet3DD13003 Datasheet (PDF)

Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13003 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE aSheet4U.com 1.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current.

  3DD13003   3DD13003







Part Number 3DD13003
Manufacturers Jiangsu Changjiang Electronics
Logo Jiangsu Changjiang Electronics
Description TRANSISTOR
Datasheet 3DD13003 Datasheet3DD13003 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 FEATURES TRANSISTOR ( NPN ) TO-220 1. BASE 2. COLLECTOR 3. EMITTER · power switching applications www.DataSheet4U.com MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 700 400 9 1.5 2 -55-15.

  3DD13003   3DD13003







HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13003 IC VCEO PC(TO-126(S)) MAIN CHARACTERISTICS 1.5A 400V 20W Package z z z z z APPLICATIONS z Electronic ballasts z High frequency switching power TO-126S TO-126 supply z High frequency power transform z Commonly power amplifier circuit z z z z z (RoHS) FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13003-O-MS-N-C 3DD13003-O-MS-N-B 3DD13003-O-M-N-C 3DD13003-O-M-N-B Halogen Free NO NO NO NO Marking D13003 D13003 D13003 D13003 Package TO-126S TO-126S TO-126 TO-126 Packaging Bag Tube Bag Tube :201101G 1/5 Free Datasheet http://www.datasheet4u.com/ R 3DD13003 ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol VCEO VEBO IC ICP PC Tj Tstg Value(min) Value 700 400 9 1.5 3.0 20 150 -55~+150 100 50 10 40 0.8 3.0 1.0 0.7 4 Unit V V V A A W ℃ ℃ Unit V V V μA μA μA V V V μS μS MHz Unit ℃/W — — — V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) tf ts fT Collector- Emitter Voltage(VBE=0) VCES Collector- Emitter Voltage(IB=0) Emitter-Base Voltage Collector Current(DC) Collector Current(pulse) Total Dissipation (TO-126(S)) Junction Temperature Storage Temperature ElECTRICAL CHARACTERISTIC Parameter Tests conditions IC=10mA,IB=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=700V, IE=0 VCE=400V,IB=0 VEB=7V, IC=0 VCE=10V, IC=0.5A, IC=1.5A, IC=1.0A, VCC=24V VCC=24V IC=5.


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