INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101D
DESCRIPTION ·With TO-3 packa...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101D
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation
voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
300
V
VCEO
Collector-Emitter
Voltage
250
V
VEBO
Emitter-Base
Voltage
4
V
IC
Collector Current-Continuous
5
A
PD
Total Power Dissipation@TC=75℃
50
W
TJ
Max.Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 2.0
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining
Voltage IC= 5mA; IB= 0
BVCBO Collector-Base Sustaining
Voltage
IC= 5mA; IE= 0
BVEBO Emitter-Base Sustaining
Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
MIN MAX UNIT
250
V
300
V
4
V
1.5
V
1.0
mA...