FQA38N30
Description
FQA38N30 — N-Channel QFET® MOSFET
FQA38N30
N-Channel QFET® MOSFET
300 V, 38.4 A, 85 mΩ
Features
38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
Low Gate Charge (Typ. 90 nC) Low Crss (Typ. 70 pF) 100% Avalanche Tested RoHS compliant
August 2014
Description
These N-Channel enhancement mode power field effect transistors are produced...
Similar Datasheet