30A02SS

www.DataSheet4U.com Ordering number : ENN7362 30A02SS PNP Epitaxial Planar Silicon Transistor 30A02SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2159A [30A02SS] Top View 1.4 0.3 Low-frequency Amplifier, high-speed switching, small motor drive. Features Side View 0.1 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.25 3 0.8 0.3 1.4 1 0.45 0.2 2 Bottom View 0.07 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20!30!1.6mm) Conditions Ratings --30 --30 --5 --600 --1.2 200 150 --55 to +150 0.07 2 1 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--200mA, IB=--...