High power PNP epitaxial planar bipolar transistor
Description
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2STA1694
High power PNP epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier
TO-3P
Description
The device is a PNP transistor manufactured using new BiT-LA...
