High power PNP epitaxial planar bipolar transistor
Description
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2ST2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
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High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
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1 2
TO-3
Audio power amplifier
Description
The device is a PNP transistor manufactured usin...
