isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE NIT
VDSS
Drain-Source Voltage (VG...