INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK995
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
2SK995
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=550V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high
voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
NIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source
Voltage (VGS=0)
550 V
Gate-Source
Voltage
±20
V
Drain Current-continuous@ TC=25℃ 5 A
Total Dissipation@TC=25℃
60 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
1.0
Thermal Resistance,Junction to Ambient 62.5
℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
isc Product Specification
2SK995
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold
Voltage
VDS=25 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate
Voltage Drain Current VDS=440V; VGS= 0
ton Turn-on time toff Turn-off time
VGS=10V;ID=3A; RL=50Ω
MIN TYP MAX UNIT
550 V
1.0 5.0 V
1.2 1.8
Ω
±1 uA
0.1 mA
50 ns
365 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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