isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Mini...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high
voltage. ·high speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
900
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2
A
Ptot
Total Dissipation@TC=25℃
80
W
Tj
Max. Operating Junction Temperature
80
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK959
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 1mA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=900V; VGS= 0
2SK959
MIN TYP. MAX UNIT
900
V
2.5
3.5
5.0
V
8.5
Ω
±100 nA
500 uA
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality an...