isc N-Channel MOSFET Transistor
2SK955
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Mi...
isc N-Channel
MOSFET Transistor
2SK955
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
800
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
80
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
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isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID= 10mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=2.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=800V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2.5A; RL=50Ω
VSD
Diode Forward
Voltage
IF=5A; VGS=0
2SK955
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
1.5
2.0
Ω
±100 nA
500 uA
110 170
ns
420 530
ns
1.0
1.5
V
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