isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE NIT
VDSS
Drain-Source
Voltage (VGS=0)
800
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK809
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold
Voltage
VDS=25 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=640V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=3A; RL=66Ω
2SK809
MIN TYP MAX UNIT
800
V
1.0
5.0
V
1.5
3.0
Ω
±1
uA
0.1
mA
60
ns
365
ns
Notice: ISC reserves the right...