DatasheetsPDF.com

2SK758

Inchange Semiconductor

N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fas...


Inchange Semiconductor

2SK758

File Download Download 2SK758 Datasheet


Description
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK758 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 2SK758 MIN TYP MAX UNIT 250 V 1.0 5.0 V 0.45 0.7 Ω ±1 uA 100 uA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)