isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Fas...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 250V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
250
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK758
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isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold
Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=200V; VGS= 0
2SK758
MIN TYP MAX UNIT
250
V
1.0
5.0
V
0.45 0.7
Ω
±1
uA
100
uA
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