2SK741
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
• • • • • Low on-resistance...
2SK741
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
2
1 2 3
1
1. Gate 2. Drain (Flange) 3. Source 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg
www.DataSheet.co.kr
Ratings 250 ±20 7 28 7 50 150 –55 to +150
Unit V V A A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C
Datasheet pdf - http://www.DataSheet4U.net/
2SK741
Table 2 Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse ...
