INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK688
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
2SK688
DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source
Voltage (VGS=0)
60 V
Gate-Source
Voltage
±20
V
Drain Current-continuous@ TC=25℃ 15 A
Total Dissipation@TC=25℃
60 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
isc Product Specification
2SK688
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 8A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate
Voltage Drain Current VDS=60V; VGS= 0
ton Turn-on time toff Turn-off time
VGS=10V;ID=5A;RL=6Ω
MIN TYP MAX UNIT
60 V
1.5 4.0 V
0.08 0.12
Ω
±100 nA
100 uA
90 ns
110 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
...