2SK672

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK672 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 60 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 10 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 3.12 Thermal Resistance,Junction to Ambient 83.3 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK672 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=10A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=5A; RL=50Ω toff Turn-off time MIN TYP MAX...