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2SK665

Panasonic Semiconductor
Part Number 2SK665
Manufacturer Panasonic Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description Silicon MOS FETs (Small Signal) 2SK665 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 s Features q High-spee...
Datasheet PDF File 2SK665 PDF File

2SK665
2SK665

Overview
Silicon MOS FETs (Small Signal) 2SK665 Silicon N-Channel MOS FET For switching unit: mm 2.
1±0.
1 s Features q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage 0.
65 0.
425 1.
25±0.
1 0.
425 1 2.
0±0.
2 1.
3±0.
1 0.
65 3 2 0.
9±0.
1 Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 0.
7±0.
1 0 to 0.
1 0.
2±0.
1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3O Internal Connection D R1 G R...


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