2SK664

Silicon MOS FETs (Small Signal) 2SK664 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 0.7±0.1 0 to 0.1 0.2±0.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3N Internal Connection D G S s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1kHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω min typ max 10 50 3.5 50 15 5 1 50 1.5 20 10 20 ton, toff measurement circuit V...