isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=150V(Min) ·Fas...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for low
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
150
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
20
A
Ptot
Total Dissipation@TC=25℃
120
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK622
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold
Voltage
VDS= 10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=10A
VSD
Diode Forward
Voltage
IF= 20A; VGS=0
IGSS
Gate Source Leakage Current
VGS= ±16V; VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=120V; VGS= 0
2SK622
MIN TYP. MAX UNIT
150
V
2.0
4.0
V
0.06 0.075 Ω
1.2
V
±10 uA
250 uA
NOTIC...