isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
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