isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies ...
