isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast ...
isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS
Gate-Source
Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
100
V
±20
V
32
A
125
W
150
℃
-55~150 ℃
2SK564
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
2SK564
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 16A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current VDS= 100V; VGS=0
VSD
Forward On-
Voltage
IS= 32A; VGS=0
MIN
TYP
MAX UNIT
100
V
2.1
4.0
V
0.06
Ω
±100 nA
1
μA
1.4
1.7
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for...
