2SK555

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK555 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 7 A Total Dissipation@TC=25℃ 60 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK555 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A VSD Diode Forward Voltage IGSS Gate Source Leakage Current IF=7A; VGS=0 VGS= ±16V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=4A; RL=7.5Ω toff Turn-off time MIN TYP. MAX UNIT 500 V 2.0 4.0 0.7 1.0 V Ω 1.0 V ±10 uA 250 uA 50 ns 65 ns 55 ns 155 ns isc website：www.iscsemi.cn 2 isc & iscsemi is regist...