DatasheetsPDF.com

2SK528 Datasheet

Part Number 2SK528
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET Transistor
Datasheet 2SK528 Datasheet2SK528 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK528 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (V.

  2SK528   2SK528






Part Number 2SK528
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Datasheet 2SK528 Datasheet2SK528 Datasheet (PDF)

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 .

  2SK528   2SK528







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK528 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1A VDS(ON) Drain-Source Saturation Voltage IF= 1A; VGS=10V IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 2SK528 MIN TYP. MAX UNIT 400 V 1.5 3.5 V 2.2 Ω 10 13 V ±1 uA 1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th.


2016-06-14 : 2SK552    2SK551    2SK549    2SK539    2SK538    2SK534    2SK531    2SK530    2SK529    2SK529   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)