2SK522

2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK522 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO IG ID Pch Tch Tstg Ratings –30 10 20 200 150 –55 to +150 Unit V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: Drain I DSS D 4 to 8 E 6 to 10 Symbol V(BR)GDO I GSS I DSS* 1 Min –30 — 4 — 8 — — 20 — F 10 to 20 Typ — — — — 10 6.8 0.1 27 1.7 Max — –10 20 –3 — — — — 2.5 Unit V nA mA V mS pF pF dB dB Test conditions I G = –100 µA, IS = 0 VGS = –0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Crss PG NF VDS = 5 V, VGS = 0, f = 100 MHz 1. The 2SK522 is grouped by I DSS as follows. 2 2SK522 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Drain Current ID (mA) Typical Output Characteristics (1) 10 VGS = 0 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 Pc h = 20 200 0 m W 100 0 50 100 150 Ambient Temperature Ta (°C) 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Curre...