2SK414

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 160V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching. ·High Cutoff frequency. ·No secondary breakdown. ·Suitable for switching regulator，DC-DC converter, PWM amplifiers，and ultrasonic power oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 160 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK414 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=15V; ID= 4A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 140V; VGS= 0 VSD Diode Forward Voltage IF= 4A; VGS=0 2SK414 MIN TYP MAX UNIT 160 V 2.0 5.0 V 0.4 0.5 Ω ±1 uA 1 mA 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only a...