DATA SHEET
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MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
2SK4...
DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING N-CHANNEL POWER
MOSFET
DESCRIPTION
2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting externals, is the best for the high-speed switching usage of the equipment that promotes the automation of space-saving and mounting.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05 0.16
+0.1 –0.06
0.65 –0.15
+0.1
2.8 ±0.2
3
0 to 0.1
1.5
1
2
FEATURES
Low input capacitance Ciss = 74 pF TYP. Low on-state resistance RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A) Small and surface mount package (SC-96)
0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2
ORDERING INFORMATION
PART NUMBER 2SK4035 2SK4035-A
Note
1. Gate 2. Source 3. Drain
PACKAGE SC-96 (Mini Mold Thin Type) SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external electrode and other parts.) Marking: XP
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Note1 Drain Current (pulse) Total Power Dissipation (TA = 25°C) Note2 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 ±30 ±0.5 ±2.0 0.2 1.25 150 −55 to +150 V V A A W W °C °C
Gate
Body Diode
Gate Pr...