2SK3991

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3991 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3991 2SK3991-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES Low on-state resistance RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A) Low C iss: C iss = 830 pF TYP. 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±30 ±120 21 1.0 150 −55 to +150 15 22.5 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17434EJ2V0DS00 (2nd edition) Date Publish...