:
2SK386
)
SILICON N CHANNEL MOS TYPE (7T-MOS)
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, D...
:
2SK386
)
SILICON N CHANNEL MOS TYPE (7T-MOS)
HIGH SPEED, HIGH
VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
INDUSTRIAL APPLICATIONS
Unit in mm
y20i5MAX. 03.3+U2
,-
;I'
FEATURES
. High Breakdown
Voltage : V/g^)Dgs=450V
.
High Forward
Transfer Admittance
:
Yf s1 1
=5S
(Typ .
. Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V
lDSS=lmA(Max.) @ Vds=450V
. Enhancement-Mode
: V t h=1.5~3.5V @ lD=lmA
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
DC Pulse
Drain Power Dissipation (Tc=25°C)
SYMBOL VdSX VGSS ID Idp
Pd
RATING 450 ±20 10 15
120
UNIT
545±Q15 wo
545±ai5
x"
+1
to
—^C5
CO
2 57
|
1. GATE 2. DRAIN (HEAT SINK) a SOURCE
Channel Temperature Storage Temperature Range
Teh stg
150
-55-150
°C EIA J
TOSHIBA
2-21F1B
Weight : 9.7g
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Gate Leaka...
