2SK3779-01R

2SK3779-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET www.DataSheet4U.com Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 250 250 59 ±236 ±30 59 1115.2 41 20 5 210 3.13 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=24A,L=3.25mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph < Note *4:IF< = -ID, -di/dt=50A/µs,VCC= BVDSS, Tch< = 150°C kV/µs VDS= < 250V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless ot...