2SK3778-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
FUJI POWER MOSFET
www.DataSheet4U.com
Super FA...
2SK3778-01
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings (mm)
200406
FUJI POWER
MOSFET
www.DataSheet4U.com
Super FAP-G Series
Features
High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous Drain Current Pulsed Drain Current Gate-Source
Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 250 250 59 ±236 ±30 59 1115.2 41 20 5 410 2.50 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1 Note *2 Note *3
Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=24A,L=3.25mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph < < Note *4:IF< =-ID, -di/dt=50A/µs,VCC= BVDSS, Tch= 150°C
kV/µs VDS= < 250V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C
Electrical characteristics (Tc =25°C unless ot...