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2SK375 Datasheet

Part Number 2SK375
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK375 Datasheet2SK375 Datasheet (PDF)

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  2SK375   2SK375






Part Number 2SK3799
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet 2SK375 Datasheet2SK3799 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3799,I2SK3799 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.3Ω. ·Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Sing.

  2SK375   2SK375







Part Number 2SK3799
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK375 Datasheet2SK3799 Datasheet (PDF)

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.) Switching Regulator Applications z Low drain-source ON resistance z High forward transfer admittance z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate.

  2SK375   2SK375







Part Number 2SK3798
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet 2SK375 Datasheet2SK3798 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3798,I2SK3798 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.5Ω. ·Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Sing.

  2SK375   2SK375







Part Number 2SK3798
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK375 Datasheet2SK3798 Datasheet (PDF)

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drai.

  2SK375   2SK375







Part Number 2SK3797
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK375 Datasheet2SK3797 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3797 FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Vol.

  2SK375   2SK375







N-Channel MOSFET

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2006-01-27 : AM2965    AM2966    BVS-301RE4    BVS-301QS4    BVS-301ET4    BVS-301TB4    BVS-301QA4    BVS-301QF4    BVS-301QH4    BVS-301QM4   


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