DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
www.DataSheet4U.com
2SK3719
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANS...
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
www.DataSheet4U.com
2SK3719
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3719 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.2
0.13 –0.05
+0.1
FEATURES
1.2 ±0.1
−0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) Super thin thickness package t = 0.37 mm TYP.
0.8 ±0.1
High gain
3
0 to 0.05
0.45
0.45 MAX. 0.4
1.4 ±0.1
ORDERING INFORMATION
PART NUMBER PACKAGE 3pXSOF (0814)
0.2 +0.1 –0
2SK3719
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = −1.0 V) Gate to Drain
Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C
EQUIVALENT CIRCUIT
2
3 1 1: Source 2: Drain 3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16787EJ2V0DS00 (2nd edition) Date Published April 2004 NS CP(K) Printed in Japan
The mark shows major revised points.
(0.26)
2
1
2003
...