2SK3716

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3716 2SK3716-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES Super low on-state resistance: R DS(on)1 = 6.5 m Ω MAX. (V GS = 10 V, I D = 30 A) R DS(on)2 = 9.1 m Ω MAX. (V GS = 4.5 V, I D = 30 A) Low Ciss : C iss = 2700 pF TYP. Built-in gate protection diode (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. 2. Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 40 ±20 ±60 ±240 84 1.0 150 –55 to +150 32 100 V V A A W W °C °C A mJ (TO-252) PW ≤ 10 µs, Duty Cycle ≤ 1% V DD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16538EJ2V0DS00 (2nd edition) Date Published August 2004 NS C...