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2SK3687-01MR Datasheet

Part Number 2SK3687-01MR
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3687-01MR Datasheet2SK3687-01MR Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3687-01MR FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Sourc.

  2SK3687-01MR   2SK3687-01MR






Part Number 2SK3687-01MR
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3687-01MR Datasheet2SK3687-01MR Datasheet (PDF)

www.DataSheet4U.com 2SK3687-01MR FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain curren.

  2SK3687-01MR   2SK3687-01MR







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3687-01MR FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25℃ 97 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.289 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 8.0A VGS= ±30V;VDS= 0 VDS= 600V; VGS= 0 IS= 16A; VGS= 0 2SK3687-01MR MIN MAX UNIT 600 -- V 3.0 5.0 V -- 0.57 Ω -- ±0.1 uA -- 25 uA -- 1.5 V NOTICE: ISC reserves the rights to ma.


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