www.DataSheet4U.com
2SK3685-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super F...
www.DataSheet4U.com
2SK3685-01
FUJI POWER
MOSFET
200309
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous drain current Pulsed drain current Gate-source
voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 500 VDSX 500 ID ±19 ID(puls] ±76 VGS ±30 IAS 19 EAS dV DS/dt dV/dt PD Tch Tstg 245.3 20 5 2.50 235 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/µs W °C °C Remarks VGS=-30V
Tch< =150°C L=1.25mH VCC =50V *2 VDS< =500V *3 Ta=25°C Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*2 See to Avalanche Energy Graph *3 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch <
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown
voltaget Gate threshold
voltage Zero gate
voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Ga...