2SK3653C

www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2SK3653C is especially suitable 1.2 ±0.1 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 –0.05 time during power-on. In addition, because of its compact for compact ECMs for audio or mobile devices such as cellphones. 0.8 ±0.1 3 0 to 0.05 FEATURES Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) Containing a diode and high resistivity, short stability time is achieved during power-on. Super thin thickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.45 0.45 MAX. 0.4 1.4 ±0.1 0.2 +0.1 –0 ORDERING INFORMATION PART NUMBER 2SK3653C PACKAGE 3pXSOF (0814) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C EQUIVALENT CIRCUIT 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or ty...