www.DataSheet4U.com
2SK3649-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F...
www.DataSheet4U.com
2SK3649-01MR
FUJI POWER
MOSFET
200304
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
TO-220F
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous drain current Pulsed drain current Gate-source
voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation
Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Viso *6 Ratings 150 120 ±33 ±132 ±30 33 169 20 5 2.16 53 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C kVrms
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
< *1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C < < < < *3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 VDS =150V *5 VGS=-30V *6 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown
voltaget Gate threshold
voltage Zero gate
voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off tim...