2SK3637

www.DataSheet4U.com Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4.5) Low on-resistance, low Qg High avalanche resistance (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 ±30 50 200 2 000 100 3 150 −55 to +150 °C °C Unit V 3.3±0.3 A A mJ W 5˚ 1 2 3 5.5±0.3 V 18.6±0.5 (2.0) Solder Dip 1: Gate 2: Drain 3: Source TOP-3E-A1 Package Internal Connection Channel temperature Storage temperature (2.0) D G S Note) *: L = 0.8 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol VDSS VDSF Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf trr Qrr L = 230 µH, VDD = 100 V IDR = 25 A, di /dt = 100 A/ µs...