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2SK3636

Silicon N-channel Power MOSFET

Description

SMD Type www.DataSheet4U.com Transistors IC Silicon N-channel Power MOSFET 2SK3636 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Avalanche energy capacity guaranteed: EAS Gate-source surrender voltage VGSS = High-speed switching: tf = 50 ns No secondary breakdown 20 mJ 30 V guaranteed + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0...

Guangdong Kexin Industrial

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