DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3577
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2S...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3577
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05 0.16+0.1 –0.06
0.65–0.15
+0.1
2.8 ±0.2
3
1.5
FEATURES
2.5 V drive available Low on-state resistance RDS(on)1 = 63 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
0 to 0.1
1 2
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.2
ORDERING INFORMATION
PART NUMBER 2SK3577 PACKAGE SC-96 (Mini Mold Thin Type)
1 : Gate 2 : Source 3 : Drain
Marking: XL
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
VDSS VGSS ID(DC) 30 ±12 ±3.5 ±14 0.2 1.25 150 –55 to +150 V V A A W W °C °C
Gate Body Diode Drain
ID(pulse) PT1
Note2
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec.
PT2 Tch Tstg
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. Whe...