2SK3573

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK3573 2SK3573-S 2SK3573-ZK 2SK3573-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES 4.5 V drive available Low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) Low gate charge QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A) Surface mount device available Note TO-220SMD package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±83 ±332 1.5 105 150 –55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16259EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in J...