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2SK3506

Part Number	2SK3506
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Aug 23, 2008
Detailed Description	2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3506 Relay Drive and DC-DC Converter App...
Datasheet	2SK3506 PDF File

Overview

2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3506 Relay Drive and DC-DC Converter Applications Motor Drive Applications • • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.
) High forward transfer admittance: |Yfs| = 26 S (typ.
) Unit: mm • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) www.
DataSheet4U.
com • Enhancement model: Vth = 1.
5 to 3.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 45 135 100 220 45 10 150 −55 to150 Unit V V V A W mJ A mJ...

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