2SK3479

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±83 ±332 125 1.5 150 –55 to +150 65 422 V V A A W W °C °C A mJ (TO-263, TO-220SMD) (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15077EJ1V0DS00 (1st edition) Date...