2SK3476

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: ηD = 60% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 3 20 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC ― ― 2-5N1A Marking 2 Type name JEITA TOSHIBA 1 UC F ** 3 Dot Lo No. 1. Gate 2. Source (heat sink) 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. 1 2002-01-09 2SK3476 Electrical Characteristics (Ta = 25°C) Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 1 A VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 500 mW, VDS = 6.0 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 500 mW, VDS = 10 V, PO = 7 W, VGS = adjust, Pi = adjust, f = 520 MHz, VSW...