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2SK3279

Sanyo Semicon Device

N-Channel Silicon MOSFET

Ordering number : ENN6600 Preliminary Features • Low ON resistance. • 4V-drive. • Ultrahigh-spped switching. 2SK3279 N...


Sanyo Semicon Device

2SK3279

File Download Download 2SK3279 Datasheet


Description
Ordering number : ENN6600 Preliminary Features Low ON resistance. 4V-drive. Ultrahigh-spped switching. 2SK3279 N-Channel Silicon MOSFET 2SK3279 DC/DC Converter Applications Package Dimensions unit : mm 2083B [2SK3279] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit : mm 2092B 6.5 5.0 4 [2SK3279] 2.3 0.5 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN HD 010705-1/3 2SK3279 Specifications Absolute Maximum ...




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