2SK3113B

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) Gate voltage rating : ±30 V Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK3113B-S15-AY Note Note Note Note LEAD PLATING PACKING Tube 70 p/tube PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g 2SK3113B(1)-S27-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY Pure Sn (Tin) Tube 75 p/tube Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) 600 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 V V A A W W °C °C A mJ (TO-252) ±30 ±2.0 ±8.0 20 1.0 150 –55 to +150 2.0 2.7 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 PT2 Tch Tstg IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1....