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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The...
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high
voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) Gate
voltage rating : ±30 V Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK3113B-S15-AY
Note Note Note Note
LEAD PLATING
PACKING Tube 70 p/tube
PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g
2SK3113B(1)-S27-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY
Pure Sn (Tin)
Tube 75 p/tube Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-251)
600
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
V V A A W W °C °C A mJ (TO-252)
±30 ±2.0 ±8.0 20 1.0 150 –55 to +150 2.0 2.7
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
PT2 Tch Tstg IAS EAS
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1....