Silicon N Channel MOS FET
Description
2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
Low on-resistance R DS = 15 mΩ typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2912(L), 2SK2912(S)
Absolute Maximum Ratings (Ta = 25°...
Hitachi Semiconductor
2SK2912 PDF File
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