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2SK2869 Datasheet

Part Number 2SK2869
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK2869 Datasheet2SK2869 Datasheet (PDF)

2SK2869 Silicon N Channel MOS FET High Speed Power Switching ADE-208-570 1st. Edition Features • Low on-resistance R DS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy .

  2SK2869   2SK2869






Part Number 2SK2869
Manufacturers Kexin
Logo Kexin
Description N-Channel Silicon MOSFET
Datasheet 2SK2869 Datasheet2SK2869 Datasheet (PDF)

SMD Type N-Channel Silicon MOSFET 2SK2869 IC MOSFET Features Low on-resistance RDS = 0.033 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching +0.2 9.70-0.2 4V gate drive device can be driven from 5V source +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Ga.

  2SK2869   2SK2869







Part Number 2SK2869
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET
Datasheet 2SK2869 Datasheet2SK2869 Datasheet (PDF)

www.DataSheet4U.com 2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Rev.2.00 Sep 07, 2005.

  2SK2869   2SK2869







N-Channel MOSFET

2SK2869 Silicon N Channel MOS FET High Speed Power Switching ADE-208-570 1st. Edition Features • Low on-resistance R DS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 20 80 20 20 34 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2869 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) Min 60 ±20 — — 1.5 — — 10 — — — — — — — — — Typ — — — — — 0.033 0.055 16 740 380 140 10 110 105 120 1.0 40 Max — — ±10 10 2.5 0.045 0.07 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V V I F = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 10V*1 I D = 10A, VGS = 4V*1 I D = 10A,.


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