2SK2433

( DataSheet : www.DataSheet4U.com ) Ordering number : ENN8353 2SK2433 2SK2433 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Low-voltage drive. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 30 120 40 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V IG=±100µA, VDS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 60 ±20 100 ±10 1.0 16.0 27.0 30 40 1900 500 100 40 55 2.0 typ max Unit V V µA µA V S mΩ mΩ pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have ...