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2SK2334(L), 2SK2334(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings
Outline
DPAK-2 4 4 1 1 D G 1. Gate ...